搜索

x
中国物理学会期刊

条形GaAs双异质结激光器的低温反常特性

CSTR: 32037.14.aps.29.383

ANOMALOUS BEHAVIER OF STRIPED GaAs DH LASERS AT LOW TEMPERATURE

CSTR: 32037.14.aps.29.383
PDF
导出引用
  • 实验证明,温度下降,受激发射阈值电流下降,进入一个饱和区。这与Hwang在300—10K间的观察结果一致。但尔后又继续上升。我们认为这起因于载流子的泄漏。当温度在6—2.8K间阈值电流、结电压、动态电阻呈现规律性的结构。如果假设发生了电子-空穴凝聚,可用朗道相图作定性说明,但也可能起因于杂质能带。

     

    It is shown in our experiments that the threshold current of the lasers decreases with the lowering of temperature, and finally enters saturation region. This is essentially consistent with Hwang's result in the range of 300-10 K. But further lowering in temperature will increase the threshold current of the lasers. We suppose that this iucreasement is caused by the leakage of carriers. When the temperature is in the range of 2.8-6 K, the threshold current, the voltage at the junction and the dynamic electric resistance all exhibit regular structures. If the electron-hole liquid has been generated in this process, it may be explained qualitatively by Landau's phase diagram. However, we also can not exclude the possibility that this structure is due to the impurity energy band, which could play an important role in the above mentioned process.

     

    目录

    /

    返回文章
    返回