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中国物理学会期刊

厚度、中温热处理和电场对a-Si:H的电导率激活能及其转折点的影响

CSTR: 32037.14.aps.31.62

THE INFLUENCE OF THICKNESS, APPLIED ELECTRIC FIELD AND MEDIUM TEMPERATURE ANNEALING ON THE ACTIVATION ENERGIES FOR CONDUCTIVITY OF a-Si:H

CSTR: 32037.14.aps.31.62
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  • 本实验测量了一系列不同厚度的掺杂的n型非晶硅样品。每个样品的电导率-温度曲线在室温以上都出现三个激活能和两个转折点。180—250℃的热处理能引起转折点的位置向高温移动。样品越薄移动的距离越大。而在极薄的样品中,此种移动甚至在室温下自发产生。改变测量电压Vs会引起中温和高温激活能的变化。电场的这种影响在厚样品中显得很强,随着样品的减薄而转弱。本文还讨论了解释这些现象的模型。并用计算机描图等方法进行了比较成功的验证。

     

    Measuring the temperature dependence of conductivity of a series doped samples of different thickness, we find three activation energies in the range of 300-500 K. After prolonged annealing in 180-250℃, the positions of two kinks formed by these activation energies shift to high temperature side. In thinner samples the shifting rate is larger than that in thicker samples. In a very thin sample the positions of the kinks even shift spontaneously after being kept at room temperature for a long-period.Changing the voltage, drop across the sample during measuring significantly influences the values of high and medium temperature activation energies. In thicker samples this kind of influence is stronger than that in thinner ones.Most of these results are interpreted by a tentative model which has been checked by computer graphics rather successfully.

     

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