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用MOS方法研究四元混晶In0.75Ga0.25As0.58P0.42中的深能级中心

物理学报, 1983, 32(9): 1220-1226.
DOI: 10.7498/aps.32.1220
CSTR: 32037.14.aps.32.1220

USING MOS STRUCTURE TO STUDY THE DEEP LEVEL OF QUARTERNARY MIXED CRYSTAL In0.75Ga0.25As0.58P0.42

Acta Phys. Sin., 1983, 32(9): 1220-1226.
DOI: 10.7498/aps.32.1220
CSTR: 32037.14.aps.32.1220
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  • 摘要

    采用MOS方法,在液相外延生长的n型In0.75Ga0.25As0.58P0.42混晶中,我们测出了两个位于导带下面0.20eV和0.48eV处的电子陷阱,对电子的俘获截面分别为1.4×10-16cm2和3.8×10-12cm2。关于采用MOS方式研究具有多层结构的化合物半导体材料的DLITS问题,本文也进行了讨论。

     

    Abstract

    By means of MOS-DLTS method, two electron traps in LPE n-type In0.75Ga0.25As0.58P0.42 material have been observed. Their depths are 0.20 eV and 0.48 eV below conduction band, and capture cross sections of electrons are about 14×10-16cm2 and 3.8×10-12cm2, respectively.Some discussion on the method applied to studying DLTS of multilayer composition semiconductor materials are also given.

     

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