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中国物理学会期刊

金属-块状半导体的接触电阻率——四点结构模型

CSTR: 32037.14.aps.33.1314

SPECIFIC CONTACT RESISTANCE OF METAL-BULK SEMI-CONDUCTOR——FOUR-POINT CONFIGURATION MODEL

CSTR: 32037.14.aps.33.1314
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  • 本文提出一种测量金属-半导体体样品的接触电阻率ρc的方法——四点结构模型。四个金属电极的排列不受任何限制,导出了ρc的表达式。如果样品不是半无限大,而是有一定厚度的薄片,则必须进行修正,给出了修正因子。根据这个模型,进行实验测量和计算,所得结果与文献报道的一致。

     

    In this paper, a method to measure the specific contact resistance ρc of M-S bulk sample-the four-point configuration model-is presented. The location of. four circular metal electrodes is arbitrary and the equations for specific contact resistance ρc have been derived. It is shown that if the sample is not semi-infinite but has a definite thickness, the equation must be modified with some correction factors. According to this model, we carried out some measurements and calculations, the results are in good agreement with that of reference 7.

     

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