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中国物理学会期刊

磁场中窄禁带半导体的高阶光学性质(Ⅰ)

CSTR: 32037.14.aps.33.1629

ON THE HIGH ORDER OPTICAL PROPERTIES OF NARROW-GAP SEMICONDUCTOR IN A MAGNETIC FIELD (Ⅰ)

CSTR: 32037.14.aps.33.1629
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  • 本文计算了在磁场中,窄禁带半导体的能级和波函数、双光子跃迁的选择定则以及双光子磁吸收系数,并将计算结果与实验进行了比较。

     

    In this paper, we have calculated the energy levels and wave functions, selection rules of two-photon fransition and two-photon magnetoabsorption of narrow-gap semiconductor in a magnetic field. The comparison of theoretical result and experimental spectra is given.

     

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