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中国物理学会期刊

磁场中窄禁带半导体的高阶光学性质(Ⅱ)

CSTR: 32037.14.aps.33.1640

ON THE HIGH ORDER OPTICAL PROPERTIES OF NARROW-GAP SEMICONDUCTOR IN A MAGNETIC FIELD (Ⅱ)

CSTR: 32037.14.aps.33.1640
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  • 本文讨论了在磁场中,窄禁带半导体在双光子吸收线附近的三阶非线性,并计算了在带边的几个非线性Faraday旋转峰和Voigt相移峰的位置和相对强度。

     

    In this paper, the third order optical nonlinearity of narrow-gap semiconductor near two-photon resonance in a magnetic field is discussed. The theoretical positions and relative strengths of the peaks of nonlinear Faraday rotation and Voigt phase shift near the gap edge are obtained.

     

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