搜索

x
中国物理学会期刊
高级检索

MoxGe1-x,MoxSi1-x薄膜的非晶形成成份及超导转变温度

物理学报, 1984, 33(5): 714-717.
DOI: 10.7498/aps.33.714
CSTR: 32037.14.aps.33.714

THE SUPERCONDUCTING TRANSITION TEMPERATURE AND COMPOSITION RANG FOR THE FORMATION OF AN AMORPHOUS PHASE IN THE MoxGe1-x, MoxSi1-x FILMS

Acta Phys. Sin., 1984, 33(5): 714-717.
DOI: 10.7498/aps.33.714
CSTR: 32037.14.aps.33.714
PDF
导出引用

  • 摘要

    用直流吸气溅射法在液氮冷底板上分别制备了MoxGe1-x,MoxSi1-x的薄膜。其形成非晶的成份分别为Ge>22at%,Si>18at％。超导转变临界温度Tc在非晶状态下随着Ge,Si的含量增加而下降(约6—3K)。非晶Mo77Ge23膜的晶化温度为780℃,而非晶Mo78Si22膜的晶化温度为480℃。

     

    Abstract

    MoxGe1-x and MoxSi1-x films are prepared by d.c. getter sputtering method onto liquid nitrogen cooled substrate. The compositions forming the amorphous state are found to be Ge>22at% and Si>18at% respectively. The superconducting transition temperature decrease with the increase of Ge, Si content from 6K to 3K in the amorphous state.The crystallization temperature of a-Mo77Ge23 is 780℃ and that of a-Mo78Si22 is 480℃.

     

      作者及机构信息

      Authors and contacts

      参考文献

    目录

    /

    返回文章
    返回