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中国物理学会期刊

CdxHg1-xTe混晶声子谱的远红外光谱研究

CSTR: 32037.14.aps.33.729

FAR INFRARED SPECTRAL STUDY OF THE PHONON STATES OF THE MIXED CRYSTALS CdxHg1-x Te

CSTR: 32037.14.aps.33.729
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  • 在温度4.2—300K和波数15—5OOcm-1的范围内研究了x=0.18到0.45的不同组分的CdxHg1-xTe的远红外吸收光谱。除剩余射线吸收带两侧的双声子吸收结构外,实验首次观察到一个位于波数20—50cm-1的低频吸收带。用面间力常数的密度函数法等估计了CdxHg1-xTe混晶的声子谱,并将上述低频吸收带归之于混晶导致的无序和“掺杂”诱发TA声子带模吸收效应。

     

    The far infrared absorption spectra measurements were performed on the CdxHg1-x Te samples with x=0.18 to 0.45 in the wavenumber region of 15-500 cm-1 at the temperatures from 4.5 to 300 K. In addition to the absorption structures of two phonon combination on both sides of the reststrahlen band of the material, a low frequency absorption band has been observed for the first time between 20-50 cm-1 in all the measured samples. By comparison with the phonon spectra of the mixed crystals CdxHg1-x Te which have been estimated by means of the ab initio density functional calculations of planar force constants, we have attributed the low frequency absorption band to the TA band modes induced by the disorder and "doping" effects resulting from by the crystalline mixing in the material.

     

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