After annealing treatment in dry oxygen, the variations of the surface charges, the interface state densities and the state density distributions in the band gap, of both Au-doped and undoped Si-SiO2 interfaces were studied experimently. The annealing behavior of the negative electric effects of gold was also investigated. Furthermore, this paper presents the compared results of the electric properties of the Si-SiO2 interfaces (including both Au-doped and undoped interfaces) formed by thermo-oxidizing silicon in dry oxygen at various temperatures and gone through annealing in dry oxygen at the same temperatures.