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中国物理学会期刊

用紫外光电子能谱研究a-Si1-xCx:H的价带特性

CSTR: 32037.14.aps.35.1253

STUDY OF VALENCE-BAND PROPERTIES IN a-Si1-xCx:H BY UV PHOTO-ELECTRON SPECTROSOPY

CSTR: 32037.14.aps.35.1253
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  • 用UPS技术获得了GDa-Si1-xCx:H合金薄膜的价带谱,分析了掺杂和表面氧化对价带谱的影响,并结合XPS,AES等电子能谱测试手段,对这种材料的价电子分布和键合特性作了初步的研究。

     

    We studied the valence-band (VB) spectra of hydfogenated amorphous silieon-earbon alloy film (a-Si C:H:) by means of UPS technique and analysed the influence of doping and surface oxidation on VB spectra. Accompanied with XPS and AES analysis, we preliminarily investigated the distribution and bonding property of valence electrons in the alloy films.

     

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