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立方半导体中双空位态的电子结构(Ⅲ)——硅中双空位态的波函数

物理学报, 1986, 35(11): 1457-1464.
DOI: 10.7498/aps.35.1457
CSTR: 32037.14.aps.35.1457

ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅲ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN SI

Acta Phys. Sin., 1986, 35(11): 1457-1464.
DOI: 10.7498/aps.35.1457
CSTR: 32037.14.aps.35.1457
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  • 摘要

    利用文献1中的基本方程和Vogl等人的紧束缚哈密顿量,计算了硅中理想双空位的Eg和Eu态的波函数,讨论了计算结果和ESR与ENDOR谱的比较。

     

    Abstract

    The wavefunctions of the Eu, state and the Eg state are evaluated for the ideal divacancy in Si, using the basic equations given in 1 and the tight binding Hamiltonian given by P. Vogl et al. Comparison between the culculated results and the ESR and ENDOR spectra of V2+ and V2- in Si is discussed.

     

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