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中国物理学会期刊

低温凝聚InSb膜相变过程中的结构及其超导电性

CSTR: 32037.14.aps.35.403

THE STRUCTURE AND SUPERCONDUCTIVITY IN THE PROCESS OF PHASE TRANSITION IN InSb FILMS CONDENSED AT LOW TEMPERATURE

CSTR: 32037.14.aps.35.403
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  • 本文研究了低温凝聚LnSb膜相变过程中的结构变化及其对超导电性的影响,由X射线衍射分析发现一系列新结果,从而解释了低温凝聚InSb膜相变过程中的电导及相应的Tc本文指出对应于第二电导峰值的Tc是六方晶系(InSb)H的层状导电机制所致。

     

    The structure changes and their effect on superconducting phase transitions in the process of the phase transitions in InSb films condensed at low temperature are studied. A series of new results are found through the experiment of X-ray diffraction. The conductivity and corresponding Tc are explained in this article. It is shown that the second peak of eleetroconductance is caused by layers conducting mechanism of hexagonal (InSb)H.

     

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