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中国物理学会期刊

硫偏析在钼(111)表面上的有序结构

CSTR: 32037.14.aps.35.667

ORDERED STRUCTURE FORMED BY THE SEGREGATION OF SULFUR ON THE Mo(111) SURFACE

CSTR: 32037.14.aps.35.667
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  • 用AES和LEFD在700—800℃温度范围内研究了硫在钼(111)表面上的偏析动力学和表面结构。样品加热到800℃硫迅速地偏析到表面上并逐步地取代了表面上的碳。加热到700℃硫没有明显的表面偏析。硫的偏析主要受它的体扩散速率的控制,表面碳的存在也抑制了硫的表面偏析。不同温度下的偏析动力学实验后,分别进行了低能电子衍射实验,观察到钼(111)(31/2×31/2)R30°-硫和1/3(44-99)-硫两种表面结构的低能

     

    The segregation kinetics and surface structures of sulfur on the Mo(111) surface have been studied by means of AES and LEED in the temperature range between 700℃ and 800℃. When the sample was heated to 800℃, sulfur segregated rapidly and progressively replaced the carbon on the surface. However, as heated to 700℃, no significant sulfur segregation has been observed. An AES analysis also showed that sulfur segregation may be controlled by its bulk diffusion rate and the presence of carbon on the surface might inhibit the surface segregation of sulfur. LEED patterns of new surfacestructures, namely Mo(111) (31/2×31/2)R30°-S and Mo(lll) l/3(99-44)-Shave beenobserved respectively.

     

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