搜索

x
中国物理学会期刊

贵金属—GaAs(110)界面价带紫外光电子谱

CSTR: 32037.14.aps.36.1255

A STUDY ON VALENCE-BAND PHOTOEMISSION SPECTRA OF NOBLE METAL-GaAs(110) INTERFACES

CSTR: 32037.14.aps.36.1255
PDF
导出引用
  • 本文研究了贵金属-CaAs(110)界面形成过程中hν=21.2eV和40.8eV的价带光电子谱的演化,在小于0.5单原子层淀积金属时,观察到所谓原子样Ag5s和Au6s态。大约从10埃到几十埃的淀积金属范围内,发现贵金属价带发射极大值现象。用金属原子团的形成、岛状生长与界面反应相关的观点讨论了实验结果。

     

    The evolution of valence hand photoemission spectra in the formation of noble metal-GaAs (110) interfaces has been studied with 21.2 eV and 40.8 eV photons. For less than 0.5 mono-layer of deposited metals, the so-called atomic-like Ag 5s and Au 6s states have been observed. A maximum in the emission of the valence band of noble metals has been observed in the range from about 10 ? to a few tens ? of deposited metals. The experiment results are discussed with the point of view of metal clustering associated with interfacial reaction.

     

    目录

    /

    返回文章
    返回