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中国物理学会期刊

敏感半导体陶瓷的显微物理模型(Ⅱ)

CSTR: 32037.14.aps.36.1313

A MICROSTRUCTURE PHYSICAL MODEL OF SENSITIVE SEMICONDUCTOR CERAMICS (Ⅱ)

CSTR: 32037.14.aps.36.1313
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  • 本文用敏感半导体陶瓷的显微物理模型描述了热敏、气敏和湿敏陶瓷的电性能。得到了一些重要的结果。这些理论结果与实验结果相符,它们为敏感陶瓷的设计提供了理论依据。可预料该模型可作为这类半导体陶瓷的统一的显微物理模型。

     

    Following paper (I), we describe the electrical feature of thermal-sensitive, gas-sensitive and humiditysensitive ceramics by the microstructure-physical model of sensitive ceramics, and obtain some important results. These theoretical results are consistent with experiments, they provide a basis of the theory for materials design of sensitive ceramics. We expect that this model can be taken as the unified microstructure-physical model of this kinds of semiconductor ceramics.

     

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