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用真空热蒸镀法制备了超导多层PbBi-SiO膜。测量了这些样品的超导临界参量。观测到同一样品上的临界电流在不同磁场和温度下有不同的特征。Multilayer PbBi/SiO film samples are prepared with alternative vacuum-evaporating method. Their critical currents are measured at various temperatures and in parallel and perpendicular applied magnetic fields. A variety of characteristics of critical current are found.







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