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中国物理学会期刊

多层PbBi-SiO膜的超导临界电流特性

CSTR: 32037.14.aps.36.1640

THE CRITICAL CURRENT OF MULTILAYER PbBi/SiO FILMS

CSTR: 32037.14.aps.36.1640
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  • 用真空热蒸镀法制备了超导多层PbBi-SiO膜。测量了这些样品的超导临界参量。观测到同一样品上的临界电流在不同磁场和温度下有不同的特征。

     

    Multilayer PbBi/SiO film samples are prepared with alternative vacuum-evaporating method. Their critical currents are measured at various temperatures and in parallel and perpendicular applied magnetic fields. A variety of characteristics of critical current are found.

     

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