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中国物理学会期刊

用Re/Al2O3/Al隧道结的电子隧道测定重掺杂Re膜的超导能隙

CSTR: 32037.14.aps.36.1643

DETERMINATION OF SUPERCONDUCTING ENERGY GAP OF HEAVILY DOPED Re THIN FILMS BY ELECTRON TUNNELING

CSTR: 32037.14.aps.36.1643
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  • 用Re/Al2O3/Al隧道结的电子隧道测定了重掺杂Re膜的超导能隙,△0=(1.04±0.02)meV,2△0/kTc=3.31±0.04。△0值是用电导极大值法确定的。结果表明,杂质使Re膜的Tc与能隙△0增加了许多倍,但是Re仍然属于弱耦合超导体。

     

    The superconducting energy gap of heavily doped Re thin films has been measured by electron tunneling of Re/Al2O3/Al junctions. We get △0= (1.04±0.02) meV, 2△0/KTc = 3.31±0.04. The △0 value is determined by the maximum conductance method. It is shown that the energy gap and the Tc of Re films increases many times by impurity, but Re remains a weakly coupled superconductor.

     

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