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中国物理学会期刊

Si(001)邻面上与台阶有关的电子态

CSTR: 32037.14.aps.36.807

THE STEP-RELATED ELECTRONIC STATES ON THE VICINAL SURFACES OF Si(001)

CSTR: 32037.14.aps.36.807
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  • 我们用角分辨光电子谱(ARUPS)研究了Si(001)邻面上与台阶有关的电子态。在对称点Γ(K11=0),发现此态的能级在EF以下0.5—0.6eV处。同时还测得该态的色散(<0.3eV)比正常的Si(001)表面态的色散(0.6—0.7eV)来得小。

     

    Angle-resolved ultraviolet photoelectron spectroscopy has been used to investigate the step-related electronic states on the vicinal surfaces of Si(00l). Such states have been found at 0.5-0.6 eV below EF at Γ point (K = 0) for vicinal surfaces with steps along 〈100〉 or 〈110〉. The dispersion of these states is smaller than that of the (001) surface states.

     

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