A new class of a-Si:H/doped a-SiNx:H superlattices with fixed sublayer thicknesses and NH3/SiH4 ratio, but varying gaseous doping level in a-SiNx:H sublayers, has been sythesized by using equipped shutter deposition system. It is shown that the position of the Fermi level in superlattices can be controlled through doping in a-SiNx:H sublayers, that means that a-Si:H/a-SiNx:H superlattices can be changed from n-type to p-type depending on the B doping level in a-SiNx:H sublayer. However, the trasport property of a-Si:H/a-SiNx:H super-lattices is not affected very much by the P doping in a-SiNx:H sublayers.