AES and ESCA has been applied to the analysis of the superconducting Nb-Ge film which were deposited onto sapphire substrate by a low-energy sputtering technique. The results of surface analysis and depth profiles showed that there are impurities such as C, O and Al etc. contained in the Nb-Ge film, and O being especially effective impurity which determines Tc. The segregation of Ge at surface has not been found. The concentration retio of Nb/Ge in the film decreased from 3.1 to 2.26 from the surface to the substrate interface. XPS depth profiles showed that the photoelectron spectrum of Nb, Ge, C and O exhibited apparant chemical shifts and variations of the peak shape, i.e. the properties and the chemical states of these elements are complicated and varing along the depth profiles. It may be estimated that Nb probably stabilize the growth of A15 Nb3Ge phase during sputtering deposition.