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中国物理学会期刊

脉冲偏磁场作用下硬磁泡形成与温度的关系

CSTR: 32037.14.aps.37.1527

TEMPERATURE DEPENDENCE OF HARD BUBBLE FORMATION IN PULSE BIAS FIELDS

CSTR: 32037.14.aps.37.1527
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  • 用一次脉冲偏场法研究了外延石榴石磁泡薄膜条状畴畴壁中VBL群体形成与温度的关系。发现了与材料参量有关的临界温度T02,当T>T02时,硬磁泡不再形成。还发现了当T02时,VBL群体形成有两个明显不同的阶段,它们的分界温度为T01。定性解释了第一个阶段的实验曲线并用双重曝光照相法揭示了两个阶段中导致软畴段硬化的运动形式的差别。

     

    The temperature dependence of VBL group formation in stripe domain walls of epitaxial garnet bubble films was investigated by means of the method of single-pulse bias field. A critical temperature T02 was found, which relats to the parameters of bubble films. When T >T02, hard bubbles no longer form. It was also found that, when T02, there are two different stages for VBL group formation. Their demarcation temperature is T01. The experimental curves in the first stage have been qualitatively interpreted. And the difference of soft domain segment movements, which lead ro their hardening, in the two stages has been revealed by means of the method of double exposure photography.

     

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