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不同调制光强下测量了MBE GaAs掺杂超晶格的室温光反射谱。较低光强下观察到一系列对应于禁戒跃迁(△n≠0)的精细结构,因此否定了它是三阶微商谱的可能性。明确提出了掺杂超晶格的光反射为一阶微商谱,并讨论了其产生机制。理论计算结果能较好地解释实验现象。Room temperature photoreflectances of a MBE GaAs doping superlattice were measured under different pump beam intensities. A series of fine structures corresponding to forbidden transitions (△n≠0) were observed af lower pump beam intensities. This means it is net a third derivative spectrum. A first derivative lineshape of photoreflectance for doping super-lattices was suggested, and the modulation mechnism was discussed. Theorefical calculations give a good explanation to the experiments.







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