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用自制的总电流谱仪对Si(111)7×7清洁表面进行了测量,得到A,B,C,D四个谱峰的能量位置分别在真空能级以上2.6,5.2,8.6和12.9eV。样品饱和吸氢后表面峰A消先。用带间跃迁模型对实验结果作了初步分析。A total current spectroscopy measurement has been performed on Si(lll)7×7 surface. Four peaks at 2.6, 5.2, 8.6, and 12.9 eV above vacuum level have been observed on clean surface, assigned as A, B, C, D respectively. Among them, the peak A contributed by the surface state is identified by hydrogen adsorption experiment. A preliminary explanation of the experimental result has been made.







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