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中国物理学会期刊

碲镉汞辐射损伤的微观过程

CSTR: 32037.14.aps.37.301

MICROCRYSTALLOGRAPHICAL PROCESS OF RADIATION DAMAGE IN Hg1-xCdx Te

CSTR: 32037.14.aps.37.301
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  • 利用高分辨率的电子显微技术,在原子和晶格尺度上,研究了碲镉汞晶体结构在大剂量高能电子作用下,晶体结构产生损伤、扩展和重构的过程。研究结果表明,碲镉汞结构损伤是在强电子束作用下,(Hg,Cd)Te4四面体的形变,在111面产生并沿111面呈阶梯形扩展的过程。从而在110方向观察到了新的更大周期的两维重构网格。

     

    The process of the lattice damage and its development in the Hg1-xCdxTe crystal under electron irradiation with high dose and high energy have been studied at lattice level by high resolution electron microscopies. The results indicate that Hg1-x CdxTe lattice damage was caused by the deformation of the (Hg, Cd)Te4 tetrahedra due to the strong electron irradiation. These deformations could be seen on the 111 plane and they developed along the 111 plane as steps. Moreover, a new superlattice with larger parameter of unit-cell was observed along the 110 direction.

     

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