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本文讨论了自由多子尾被半导体深中心俘获的动力学。指出,当DLTS响应区被局限在尾区端部时,DLTS信号强度与多子脉冲宽度成正比。它可用于多子俘获截面(包括浅杂质浓度较高及多子俘获截面较大的情况)的测量。We have discussed the kinetics of the capturing of freemajority tail by deep centres in semeconductors. We pointout that, the DLTS' signal is dicrectly proportional to the pulse width, if the DLTS' response region is restricted in the end of free-carrier tail vegion.This phenomenon may be used to measure the majority carrier capture cross section, in which the net shallow impurity concentration and the majority carrier capture cross section are both relatively wigh.







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