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中国物理学会期刊

位错联系的应力场对晶体生长影响的蒙特-卡罗模拟

CSTR: 32037.14.aps.37.660

A MONTE-CARLO SIMULATION STUDY ON THE INFLUENCE OF THE STRESS FIELD ASSOCIATED WITH A DISLOCATION ON CRYSTAL GROWTH

CSTR: 32037.14.aps.37.660
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  • 本文运用van der Hoek等人提出的应力能函数,进行晶体生长的蒙特-卡罗模拟,研究了位错空核的形成,发现固—流键平均形成能ω和过饱和度△μ都对空核形成有很大的影响。本文还讨论了台阶及二维扩散与空核半径之间的关系。模拟表明位错空核将延缓直台阶的推进。

     

    We use the stress energy function suggested by van der Hoek et al. to simulate the formation of dislocation hollow cores. Both average formation energy of the solid-fluid bond ω and driving force △μ affect the formation of hollow cores greatly. The relation between radius of hollow core and diffussion is expressed by the back-force effect. The results of our Monte-Carlo simulation show that a straight step passing a dislocation will be retarded by the stress field.

     

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