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本文采用一种新的变分波函数描述GaAs/Ga1-xAlxAs窄量子阱中的浅施主基态,并计算了杂质基态波函数和结合能。计算所得数值结果表明正确考虑窄量子阱与杂质势间的耦合作用是极为重要的。Using a novel variational wave function for the ground state of the shallow donor in a narrow GaAs/Ga1-xAlxAs quantum-well, we have calculated the wave function and the binding energy for impurity ground state. The numerical results shown that it is important to describe the coupling between the narrow quantum-well and the impurity potential correctly.







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