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GaAs单晶滑移位错X射线形貌术研究

物理学报, 1989, 38(8): 1344-1347.
DOI: 10.7498/aps.38.1344
CSTR: 32037.14.aps.38.1344

STUDY OF SLIP BY DISLOCATIONS IN GaAs CRYSTAL BY X一RAY TOPOGRAPHY

Acta Phys. Sin., 1989, 38(8): 1344-1347.
DOI: 10.7498/aps.38.1344
CSTR: 32037.14.aps.38.1344
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  • 摘要

    应用X射线形貌技术研究了掺In和不掺In 砷化稼单晶的滑移位错. 观察到由于位错密度不同, 其滑移位错的组态不同。对滑移位错和胞状网络进行了初步的理论解释. In 和不掺In 砷化稼单晶的滑移位错. 观察到由于位错 对滑移位错和胞状网络进行了初步的理论解释.

     

    Abstract

    Slip dislocation in In-doped and undoped GaAs singe crystal were investigated by means of X-ray topography. Different configurations of the slip dislocations were observed, which resulted from the different densities of dislocations. The mechanism of the slip dislocations and cellular network structure formation is also discussed preliminarily.

     

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