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本文报道了以Brewster角入射的无掺杂半绝缘GaAs的1μm微微秒光脉冲自透射的实验和理论结果。最佳拟合的深能级EL2态的密度为1.2×1016cm-3,双光子吸收系数为29cm/GW,自由载流子的吸收截面为2.7×10-17cm2。In this paper, we report the experimental and theorical results of self-transmission of pi-cosecond light pulses of 1 μm in undoped semi-insulating GaAs at Brewster angle incidence. The best fitting density of the deep level EL2 is 1.2×l016cm-3, the two-photon absorption coefficient is 29 cm/GW and the free-carrier cross section is 2.7×10-17 cm2.







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