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溅射a-GeNx和a-GeNx:H薄膜的制备及光电特性的研究

物理学报, 1989, 38(4): 573-578.
DOI: 10.7498/aps.38.573
CSTR: 32037.14.aps.38.573

OPTICAL AND ELECTRICAL PROPERTIES OF SPUTTERED AMORPHOUS GeNx AND GeNx:H FILMS

Acta Phys. Sin., 1989, 38(4): 573-578.
DOI: 10.7498/aps.38.573
CSTR: 32037.14.aps.38.573
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  • 摘要

    本文报道了应用射频反应溅射法制备a-GeNx和a-GeNx:H薄膜的工艺条件及其基本的光电特性,并报道了它的IR和Raman特性,讨论了掺氮对a-GeNx:H膜带尾态ΔE,IR谱及Raman谱的影响。

     

    Abstract

    Technological conditions and basic photoele tronic properties of a-GeNx and a-GeNx:H films prepared by an rf-reactive sputtering method are reported. The IR and Raman specrta are presented. The effects of N content on ΔE and IR and Raman spectra of a-GeNx:H film are also discussed.

     

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