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中国物理学会期刊

非线性增益和波导结构对半导体激光器的谱线宽度的作用

CSTR: 32037.14.aps.38.699

EFFECT OF NONLINEAR GAIN AND WAVEGUIDE STRUCTURE ON THE LINEWIDTH OF SEMICONDUCTOR LASERS

CSTR: 32037.14.aps.38.699
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  • 本文采用半经典理论研究了非线性增益和波导结构对量子相位噪声引起的模式谱线增宽过程的作用,得出谱线宽度不但与线性增益而且与三阶增益有关,并且都受到波导结构的制书。从而提出新的谱线增宽因子和与功率无关的线宽的新机制。

     

    The effect of nonlinear gain and waveguide structure on the modal linewidth broadening produced by with quantum phase noise in semiconductor lasers is inverstigated with semiclassical theory. It is shown that the modal linewidth depends not only on the linear gain but also on the third order nonlinear gain and the waveguide structure. Thus a new linewidth broadening enhancement factor and a new mechanism of the power-independent linewidth component are proposed.

     

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