搜索

x
中国物理学会期刊

非晶Fe80B20-xMx合金的电子结构的穆斯堡尔谱学研究

CSTR: 32037.14.aps.38.794

STUDY OF THE ELECTRONIC STRUCTURE OF AMORPHOUS Fe80B20-xMx BY MOSSBAUER SPECTROSCOPY

CSTR: 32037.14.aps.38.794
PDF
导出引用
  • 从4.2K和室温下非晶Fe80B20-xMx合金(M=P,C,Si,Ge)中超精细场和同质异能移的变化关系考察了合金的电子结构.按“刚带-施主”模型估计了从类金属原子向Fe的3d带迁移的电子数;进一步的分析表明,Fe的4s电子在这一电子迁移过程中的影响不可忽略.对于Fe原子磁矩的变化同反方向的电子迁移之间的矛盾,它给出了一个可能的解释.

     

    In order to examine the electronic structure of amorphous Fe80B20-xMx (M = P, C, Si, Ge), the hyperfine field and the isomer shift of these alloys are obtained and analyzed. The number of the electrons transferred from metalloid to the 3d band of Fe is estimated on the basis of the "rigid band-donor" model. It is shown that the 4s electrons of iron take part in the charge transfer process. A possible resolution of the contradiction between the variation of magnetic moment and the counter charge transfer to the "rigid band-donor" model is given.

     

    目录

    /

    返回文章
    返回