Titanium films are deposited on Si wafers by electron-beam evaporation in vacuum, the base pressure of the system is 10-7 Torr. Solid phase reaction results through rapid thermal annealing. After annealed at 540-600℃, two metastable phase diffraction peaks of Ti5Si4 are observed in X-ray diffraction (XRD) pattern. Prolonging the annealing time, the first nucleated phase Ti5Si4 remains unchanged until titanium is completely consumed, then it transforms into a stable phase TiSi2. When the annealing tcmpeiature is above 640℃, a stable phase TiSi2 is formed. The researches of sheel resistance and Raman scattering give the results which are in good agreement with XRD. The two Raman peaks at 207 and 244 cm-1 are characteristic Raman peaks of TiSi2, but the other three Raman peaks at 270, 297 and 341 cm-1 are likely attributed