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非晶Si和非晶Si基合金半导体的g因子计算

物理学报, 1990, 39(9): 1441-1445.
DOI: 10.7498/aps.39.1441
CSTR: 32037.14.aps.39.1441

CALCULATION FOR g-VALUES OF THE AMORPHOUS Si AND AMORPHOUS Si-BASED ALLOY SEMICONDUCTORS

Acta Phys. Sin., 1990, 39(9): 1441-1445.
DOI: 10.7498/aps.39.1441
CSTR: 32037.14.aps.39.1441
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  • 摘要

    本文采用改进的CNDO/2(Semi Empirical Hartree-Focu of Complete Neglect of Diffe-rential Overlap)分子轨道方法计算了非晶Si和非晶Si基合金半导体的顺磁共振朗德劈裂因数(g值),讨论了晶格弛豫对g值的影响。计算结果与实验符合。

     

    Abstract

    In this paper, the g-values of the ESR signals in amorphous Si and Si-based alloys have been calculated by using the improved CNDO/2 molecular orbital method. The effects of the structural relaxation on the g-valucs have been also discussed. The calculated results are in accord with the experiments.

     

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