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中国物理学会期刊

氧在GaP(111)上的初级吸附阶段

CSTR: 32037.14.aps.39.1665

INITIAL STAGE OF OXYGEN ADSORPTION ON GaP(111) SURFACES

CSTR: 32037.14.aps.39.1665
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  • 采用多种表面分析手段,系统地研究了氧在GaP(111)上的吸附,发现氧的初级吸附在1×104L时就已饱和,获得了有关这一阶段表面电子结构的变化、表面能带弯曲、化学吸附反应等方面的信息,发现这一吸附阶段与表面缺陷有关,适当地加热处理则可能将缺陷和氧一同去除,因此这有可能成为一种有效的、去除缺陷的表面工程手段。

     

    A number of surface analysis techniques, including XPS, UPS and HREELS, are used to study oxygen adsorption on GaP(111) surfaces.Initial oxygen adsorption is found to be saturated at an exposure around 104L. Information concerning surface electron structure variation in this stage, such as surface band bending, chemical shifts, etc. has been obtained. It is found that this stage of oxygen adsorption is related to surface defects. Proper annealing treatment can remove the surface defects along with the adsorbed oxygen. Such oxygen adsorption followed by annealing might be a way for defect removal in surface engineering.

     

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