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研究在掺杂n-i-p-i的抛物多量子阱结构中,由于非简谐修正项所导致的子带间光学二次非线性响应(对应于x(2)),计算表明,x(2)比GaAs体材料高一至二个数量级,而其共振跃迁频率位于中红外区域。In this article, we consider the optical second harmonic nonlinearity (corresponding to x(2)) associated with intersubband transitions in a doped parabolic multiquantum well structure, due to the anharmonic correction. The calculation indicates that the x(2)(2ω) is larger than that of the bulk GaAs by 1 to 2 orders of magnitude, and the resonant transition frequencies are in the middle infrared region







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