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用低能电子衍射研究了ⅢA-VA和ⅡB-VIA化合物(110)和(1010)表面的弛豫,发现当理论计算与实验符合得很好时其结构是:保持表面上A-B键长不变,用一个旋转角ω,使B原(离)子向外移动,A原(离)子向内移动,第一表面原子层间距d1=0.610-0.810?对ⅢA-VA(110),0.536—0.825?对ⅡB-VIA(110)和0.633-1.060?对ⅡB-VIA(1010),第二表面原子层间距d2=1.300-1.610?对ⅢA-VA(100),1.430-1.700?对ⅡB-VIA(110)和0.820-0.930?对ⅡB-VIA(1010),而第三表面原子层间距d3=1.410-2.440?对ⅢA-VA(110),2.020-2.250?对ⅡB-VIA(110)和1.910-2.440?对ⅡB-VIA(1010)。对此结构,弛豫率α是:0.24±0.02对ⅢA-VA(110),0.25±0.02对ⅡB-VIA(1010)和0.33±0.03对ⅡB-VIA(1010)。We have studied the relaxation of IIIA-VIA and IIB-VIA compounds AB (110) and AB (1010) surfaces with LEED, and found that the best agreement between theory and experiment occurs in such a sturcture, in which the B atoms are tilted outward and A atoms are tilted inward, with an angle of rotation ω, keeping the bond length at surface A-B unchanged, and the first atomic surfaces layer distances d1=0.610-0.810? for IIIA-VA (110) , 0.536-0.825?for IIB-VIA (110) and 0.633-1.060?for IIB-VIA (1010) and the second surfaces atomic layer distances d2 = 1.300-1.610?for IIIA-VA(ll0) , 1.430-1.700?for IIB-VIA (110) and 0.820-0.930?for IIB-VIA (1010) and third one d3 = 1.410-2.440?for 1I1A-VA (110), 2.020-2.250?for IIB-VIA (110) and 1.910-2.440?for IIB-VIA (1010) . For this structure the relaxation susceptibility a are: 0.24±0.02for IIIA-VA (110), 0.25±0.02 for IIB-VIA (110) and 0.33 ±0.03 for IIB-VIA (1010).
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中国物理学会期刊
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