A lamellar X-ray dynamic diffraction theory of the surface distorted crystals and the simulation method for obtaining information in distorted layers are presented. Influence of different double crystals' arrangement upon rocking curves(RCs) and simulation procedure are, disscussed. The relation between RCs and the depth distributions of strain and damage in distorted crystals is analysed. As an example, the simulation results of the B+ implanted Si(l00) wafers are given.