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中国物理学会期刊

GaSb(100)的表面再构

CSTR: 32037.14.aps.41.1315

SURFACE RECONSTRUCTION OF GaSb(lOO)

CSTR: 32037.14.aps.41.1315
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  • 用低能电子衍射(LEED),光电子能谱(XPS和UPS)研究GaSb(100)表面的各种再构:c(2×6),(1×3)和(2×3)。所有这三种再构表面都以有失列的Sb原子结尾。在Sb气氛中退火可使分子束外延(MBE)制备的、表面Sb原子形成二聚物的c(2×6)再构和离子轰击加退火(IBA)制备的、表面存在Ga岛的(2×3)再构均变为简单的(1×3)再构。

     

    Various reconstructions (c(2×6), (1×3) and (2×3)) of the GaSb (100) surface have been studied by LEED, XPS and UPS. All the three reconstructed surfaces are terminated by Sb atoms with some rows missing. Annealing in an Sb environment of both MBE-prepared, Sbdimerized c(2×6) reconstruction and IBA-prepared, Gaislands-existing (2×3) reconstruction leads to the same (1×3) reconstruction.

     

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