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GaAs/Al0.23Ga0.77As双量子阱的带边不连续性和阱间耦合

物理学报, 1992, 41(8): 1322-1329.
DOI: 10.7498/aps.41.1322
CSTR: 32037.14.aps.41.1322

BAND-EDGE DISCONTINUITIES AND COUPLING BETWEEN WELLS FOR GaAs/Al0.23Ga0.77As DOUBLE QUANTUM WELLS

Acta Phys. Sin., 1992, 41(8): 1322-1329.
DOI: 10.7498/aps.41.1322
CSTR: 32037.14.aps.41.1322
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  • 摘要

    本文报道在300和77K对一组具有不同垒宽Lb0.23Ga0.77As双量子阱样品的光调制反射谱(PR)的研究结果。除观察到11H,11L和22H等容许跃迁外,同时还识别一个从Al0.23Ga0.77As价带顶至量子阱第一电子束缚能级的跃迁,另一个从量子阱第一轻空穴束缚能级至Al0.23Ga0.77As导带底的跃迁。利用这些跃迁确定导带边不连续性为0.63。对Lb 

    Abstract

    We report a detailed photoreflectance study at 300 and 77K of a set of GaAs/ Al0.23Ga0.77As double quantum well samples with different barrier widths Lb0.23Ga0.77As valence band to the first electron confined state and from the first light hole confined state to the bottom of the Al0.23Ga0.77As conduction band. By using these transitions the conduction band-edge discontinuity has been determined to be Qcb 

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