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硅化物薄膜的质子弹性散射分析

物理学报, 1992, 41(12): 2049-2054.
DOI: 10.7498/aps.41.2049
CSTR: 32037.14.aps.41.2049

MeV PROTON ELASTIC BACKSCATTERING ANALYSIS OF SiNx/Si AND SiOx/Si FILMS

Acta Phys. Sin., 1992, 41(12): 2049-2054.
DOI: 10.7498/aps.41.2049
CSTR: 32037.14.aps.41.2049
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  • 摘要

    本文报道了一种分析硅衬底上SiNx和SiOx的N/Si和O/Si含量比的简便方法。用1.95MeV质子弹性散射测量薄膜(9000—15000)的组分比和厚度,实验值与2.1MeVHe的背散射分析(RBS)结果符合得很好;对微米以上厚度样品,MeVH束分析更为有利,这是与He束背散射分析互补的一种方法。文中给出了实验结果,并进行了讨论。

     

    Abstract

    A simple method for the analysis of concentration ratios N/Si and O/Si in SiNx/Si and SiOx/Si is presented. 1.95 MeV H beam elastic backscattering was used to determine the composition and thickness. A comparison with 2.1 MeV He beam Rutherford backscsttering (RBS) is given. It provides a complementary analysis technique. A brief discussion on results is given.

     

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