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n-GaAs表面全息光栅的形成及表面等离振子电磁耦子发光测定

物理学报, 1992, 41(2): 282-287.
DOI: 10.7498/aps.41.282
CSTR: 32037.14.aps.41.282

FORMATION OF HOLOGRAPHIC DIFFRACTION GRATINGS ON THE SURFACE OF A n-TYPE Ga As AND MEASURING OF LIGHT EMISSION BY SURFACE PLASMON POLARITON

Acta Phys. Sin., 1992, 41(2): 282-287.
DOI: 10.7498/aps.41.282
CSTR: 32037.14.aps.41.282
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  • 摘要

    本文讨论n-GaAs表面采用H2O2-H2SO4系光加速腐蚀形成衍射光栅的方法,以及Ag/n-GaAs肖脱基势垒二极管表面等离振子电磁耦子发光的测定。

     

    Abstract

    The method to produce diffraction gratings by H2O2-H2SO4 photo-accelerated etching on the surface of n-GaAs and measuring of light emission by surface pla smon polariton from an Ag/n-GaAs Schottky barrier diode are discussed in this paper.

     

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