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在电子助进化学气相沉积(EACVD)类金刚石薄膜中,使用和比较CH4/H2与CH4/H2/Ar两种体系,用静电探针测量这两种体系的电子温度、电子密度,结果表明,在CH4/H2/Ar体系中,电子密度较高,使成膜的速率增加。In deposition of the diamond-like films by electron assisted plasma chemical vapor deposition, two systems (CH4/H2 and CH4/H2/Ar) have been used and compared. The electron temperature and electron density have been measured by means of Langmuir single probe. The results show that the electron density in CH4/H2/Ar is higher than that in CH4/H2, and the growth rate of the films increases in CH4/H2/Ar system.







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