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中国物理学会期刊

Gd掺杂的Bi系2212相单晶电子状态的X射线光电子能谱研究

CSTR: 32037.14.aps.41.655

X-RAY PHOTOELECTRON SPECTROSCOPY STUDY ON THE ELECTRONIC STATE OF Gd-DOPED 2212 SINGLE CRYSTAL IN Bi-BASED SYSTEM

CSTR: 32037.14.aps.41.655
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  • 利用X射线光电子能谱(XPS)研究了Bi系纯2212相超导单晶和Gd掺杂的2212相绝缘体单晶的电子状态的区别。实验结果表明Gd掺杂引起超导电性的变化是由于D2p轨道空穴填充引起。本文还对Cu2p3/2XPS卫星峰与主峰强度之比(Is/Im),Bi-O层性质以及Bi系Fermi能级附近态密度的来源等问题进行了讨论。

     

    XPS measurements have been carried out to study the difference in the electronic state between the pure 2212 single crystal and the Gd-doped 2212 single crystal in Bi-based system. Experimental results show that the suppression of superconductivity by Gd doping is caused by the hole filling in the O2p orbital. The problems, such as that about the ratio of the intensity of the satellite peaks to that of main peak (Is/Im) the physical property of Bi-O layer and the contribution to the density of state (DOS) at Er for the Bi-based 2212 phase have also been discussed.

     

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