In this paper, the secondary defects and their annealing behaviours in Zn+, Mg+, Be+ ion-implanted InSb have been investigated by means of the plan-view transmission electron microscopy (TEM), cross-sectional TEM(XTEM) and Rutherford backscattering and channeling spectroscopy. The result shows that the secondary defects caused by the lighter Be+ ion implantation are much less than that caused by the heavier Zn+ ion implantation. And the ion Mg+, in the region of medium dose (about 1×1031cm2), causes the damage easy to restore. The effect of annealing temperature is investigated from 360℃ to 440℃, and the result indicates that the 360℃ is a better annealing temperature. The figuration of secondary defects in ion-implanted InSb is differant from that in ion-implanted Si: the secondary defects in ion-implanted InSb consist of dislocations and dislocation networks mainly, and the dislocation loop is not dominant, however, precipitates and fault tetrahedras also exist in it.