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中国物理学会期刊

半导体中激子的叠加态及其复合辐射

CSTR: 32037.14.aps.42.1141

SUPERPOSITION STATES OF EXCITONS IN SEMICONDUCTOR AND RECOMBINATION RADIATION

CSTR: 32037.14.aps.42.1141
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  • 本文在玻色近似和“非玻色近似”两种情形下,讨论单激子和双激子Dicke和Fock叠加态及处在这些态的激子的压缩特性、反聚束特性和亚泊松统计特性。文中指出了处在这些态的激子的复合辐射光也可具有这些非经典特性,并对各种情形所得结果作了比较和解释。

     

    Under Bose and non-Bose approximations, the squeezing, antibunching and sub-Poisso-nian statistics of one-exciton and two-exciton in the Dicke and Fock superposition states are discussed. The recombination radiation of excitons in these superposition states can also have these non-classical effects. The results obtained in various situations are compared and explained.

     

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