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采用一种新的简便的氢钝化方法,可以在Si(100)衬底表面获得稳定的钝化层。用俄歇电子能谱(AES),反射式高能电子衍射(RHEED),C-V和二次离子质谱(SIMS)等方法对衬底表面及其上面生长的分子束外延层进行检测,发现这种方法可以有效地防止衬底表面被碳、氧沾污,降低退火温度至少200℃,并完全消除外延层与Si(100)衬底界面处的高浓度硼尖峰。在此基础上,结合衬底表面锗束处理的实验结果,对硼尖峰的主要来源是由于硅衬底表面的氧化层这一观点提供了新的有力证据。A stable hydrogen-terminated Si (100) surface was obtained by using a modified mothed. The Si (100) surface was hydrogen passivated during the ex-situ HF-dip followed by the in-situ low-temperature desorption of physisorbed residues. It was found that this procedure is very effective to eliminate the boron spike at the Si MBE layer/p-Si substrate interface. The origon of the boron spike is also discussed.
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中国物理学会期刊
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