We have studied behaviour of a-Ge/Pb layers after annealing at different temperatures. We obtained: (1) Pb induced amorphous Ge to crystalize. (2) There are two diffusion mecha-nism in the annealing a-Ge/Pb layers. (3) For a-Ge/Pb 200nm/100nm layers, preferred orientation Pb are recrystalllized in annealing. We also explained abnormal behaviour of resistivity during the annealing of layers.