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中国物理学会期刊

量子点中浅施主的能谱结构

CSTR: 32037.14.aps.43.1008

SPECTRAL STRUCTURES OF SHALLOW DONORS IN QUANTUM DOTS

CSTR: 32037.14.aps.43.1008
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  • 在有效质量近似下,使用线性变分方法计算了处于GaAs-Ga1-xAlxAs球形量子点中不同位置的浅施主杂质的能谱结构,讨论了能级的简并度和不同情况下的能级序,扩展了文献[10]中所得到的结果。计算结果表明电子结构明显地依赖于量子点的半径和杂质离子所处的位置。计算结果还说明选择合适的基函数对于讨论量子点中问题的重要性。

     

    Using the hydrogenic-effective-mass theory, the spectral structure is calculated employing a linear variational method and presented for a hydrogenic shallow donor in a spherical quantum dot of GaAs-Ga1-xAlxAs with the donor ion located at arbitary position. It is an extension of the calculation in Ref.10. The quantum-level sequence and degeneracy for the single electron state in the dot are discussed. Results of calculations indicate that the quantum-level structures depend on the dot radius and the ion position apparently, and that it is important to choose a proper set of base functions in the calculation.

     

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