Metal Au was deposited onto oriented phosphorous doped n-type epitaxial silicon. wafers, with or without plasma hydrogen treatment, to form Au/n-Si Schottky barrier (SB). The experimental results indicate: hydrogen decreases the Schottky barrier height (SBH) of Au/n-Si by 0.13eV; the SBH of Schottcky barrier containing hydrogen (SB(H)) can be controlled by zero bias annealing (ZBA) and reverse bias annealing (RBA), i.e. ZBA decreases and RBA increases the SBH of SB(H); and the controlling of SBH is reversible in at least three ZBA/RBA cycles. The increased SBH value of SB(H) after RBA is related not only to the reverse bias used in annealiug but also to the annealing temperature.